活動(dòng)詳細(xì)
2017年碳化硅和相關(guān)材料國(guó)際會(huì)議
[ 會(huì)議基本信息 ]
會(huì)議名稱(中文): 2017年碳化硅和相關(guān)材料國(guó)際會(huì)議
會(huì)議名稱(英文): International Conference on Silicon Carbide and Related Materials 2017
所屬學(xué)科: 半導(dǎo)體技術(shù),材料科學(xué)基礎(chǔ)學(xué)科,無機(jī)非金屬材料
開始日期: 2017-09-17
結(jié)束日期: 2017-09-22
所在國(guó)家: 美國(guó)
所在城市: 美國(guó)
具體地點(diǎn): Washington, DC
主辦單位: 美國(guó)材料研究學(xué)會(huì)
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會(huì)議網(wǎng)站: http://www.mrs.org/icscrm-2017/
會(huì)議背景介紹:
The 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) is the premier biennial meeting covering all aspects of the latest SiC research and development. Scientists, engineers, and students in the SiC field will gain insights into how challenges and advances in one subfield motivate research in other subfields through a combination of tutorials, industrial talks and presentations of the latest research and development from the SiC community.
The Conference theme—From Niche to Mainstream—will provide existing practitioners, as well as those transitioning to the field, with a technical program that identifies materials and device challenges, describes novel device and materials approaches, and discusses applications that are driving the advancement of SiC technology.
Held September 17-22, 2017, in Washington, DC, at the Wardman Park Marriott, the Conference continues its traditional rotation among Asia, Europe and the US.